1 item symbol ratings unit remarks drain-source voltage v ds 600 v dsx 600 continuous drain current i d 11 pulsed drain current i d(puls] 44 gate-source voltage v gs 30 maximum avalanche current i ar 11 non-repetitive e as 439.1 maximum avalanche energy repetitive e ar 19.5 maximum avalanche energy maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 peak diode recovery -di/dt -di/dt 100 max. power dissipation p d 195 1.67 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermal characteristics 2SK3930-01L,s,sj fuji power mosfet maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =600v v gs =0v v ds =480v v gs =0v v gs =30v i d =5.5a v gs =10v i d =5.5a v ds =25v v cc =300v i d =5.5a v gs =10v r gs =10 ? min. typ. max. units v v a ma na ? s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.641 75 c/w c/w symbol bv dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =25v v gs =0v f=1mh v cc =300v i d =11a v gs =10v i f =11a v gs =0v t ch =25c i f =11a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj mj kv/s kv/s a/s w c c 600 3.0 5.0 25 2.0 100 0.62 0.80 510 1100 1650 150 225 812 17 26 711 40 60 812 30 45 9 13.5 10 15 1.00 1.50 120 250 0.6 1.5 -55 to +150 outline drawings (mm) www.fujielectric.co.jp/fdt/scd super f ap-g series n-channel silicon power mosfet equivalent circuit schematic 200406 v gs =-30v note *1 note *2 note *3 v ds 600v note *4 note *5 tc=25c ta=25c = < features high speed switching low on-resistance no secondary breakdown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) gate(g) source(s) drain(d) = < note *1:tch 150c,repetitive and non-repetitive note *2:startingtch=25c,i as =5a,l=32.2mh, v cc =60v,r g =50 ? e as limited by maximum channel temperature and avalanche current. see to the ?avalanche energy? graph note *3:repetitive rating:pulse width limited by maximum channel temperature. see to the ?transient thermal impedance? graph. note *4:i f -i d , -di/dt=100a/ s,v cc bv dss ,tch 150c note *5:i f -i d , dv/dt=5kv/ s,v cc bv dss ,tch 150c = < = < = < = < = < = < see to p4
2 characteristics 2SK3930-01L,s,sj fuji power mosfet 0 25 50 75 100 125 150 0 40 80 120 160 200 240 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 5 10 15 20 25 0 4 8 12 16 20 24 20v 10v 7.5v 7v 6.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c vgs=6v 012345678910 0.01 0.1 1 10 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.01 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 7.0v vgs=6.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 rds(on) [ ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=5.5a,vgs=10v
3 2SK3930-01L,s,sj fuji power mosfet -50-25 0 255075100125150 0 1 2 3 4 5 6 7 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250ua vgs(th) [v] tch [ c] 0 1020304050607080 0 4 8 12 16 20 24 qg [nc] typical gate charge characteristics vgs=f(qg):id=11a,tch=25 c vgs [v] 480v 300v vcc= 120v 10 -1 10 0 10 1 10 2 10 3 1p 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=300v,vgs=10v,rg=10 ? td(on) tr tf td(off) t [ns] id [a] 0 25 50 75 100 125 150 0 100 200 300 400 500 i as =5a i as =7a i as =11a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=60v,i(av)<=11a
4 2SK3930-01L,s,sj fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ outline drawings (mm) type(s) type(sj) 1 2 3 1 2 3 type(l) 1 2 3 1 2 3 4 4 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=60v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ c/w] t [sec]
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